DONOR-ACCEPTOR-TYPE COMPLEX IN GAAS - FURTHER COMMENT

被引:2
作者
DEAN, PJ
HERBERT, DC
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D O I
10.1063/1.327866
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O59 [应用物理学];
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页码:2297 / 2300
页数:4
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[1]   ISOELECTRONIC TRAP BISMUTH IN INDIUM PHOSPHIDE [J].
DEAN, PJ ;
WHITE, AM ;
WILLIAMS, EW ;
ASTLES, MG .
SOLID STATE COMMUNICATIONS, 1971, 9 (18) :1555-&
[2]   ISOELECTRONIC TRAP LI-LI-O IN GAP [J].
DEAN, PJ .
PHYSICAL REVIEW B, 1971, 4 (08) :2596-&
[3]  
DEAN PJ, 1970, 10TH P INT C PHYS SE, P286
[4]  
DEAN PJ, 1973, LUMINESCENCE CRYSTAL, P538
[5]   NEW RED PAIR LUMINESCENCE FROM GAP [J].
HENRY, CH ;
DEAN, PJ ;
CUTHBERT, JD .
PHYSICAL REVIEW, 1968, 166 (03) :754-&
[6]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
[7]   STRESS EFFECTS ON EXCITONS BOUND TO AXIALLY SYMMETRIC DEFECTS IN SEMICONDUCTORS [J].
MORGAN, JVW ;
MORGAN, TN .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :739-&
[8]   EXCITON ENERGY-SPECTRUM IN GAAS IN A MAGNETIC-FIELD [J].
NAM, SB ;
REYNOLDS, DC ;
LITTON, CW .
JOURNAL OF LUMINESCENCE, 1976, 12 (01) :277-284
[9]   EFFECT OF UNIAXIAL STRESS ON EXCITONS BOUND TO BISMUTH IN GAP [J].
ONTON, A ;
MORGAN, TN .
PHYSICAL REVIEW B, 1970, 1 (06) :2592-&
[10]   DONOR-ACCEPTOR-TYPE COMPLEX IN GAAS [J].
REYNOLDS, DC ;
ALMASSY, RJ ;
LITTON, CW ;
NAM, SB ;
MCCOY, GL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5336-5338