GATE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE IN DRAIN CURRENT CHARACTERISTICS OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS

被引：25

作者：

LASKAR, J

KETTERSON, AA

BAILLARGEON, JN

BROCK, T

ADESIDA, I

CHENG, KY

KOLODZEY, J

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：528 / 530

页数：3

共 12 条

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[7] PHYSICS OF REAL-SPACE TRANSFER TRANSISTORS [J].

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[9] DC AND RF MEASUREMENTS OF THE KINK EFFECT IN 0.2-MU-M GATE LENGTH ALINAS GALNAS INP MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

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