DC AND RF CHARACTERIZATION OF SHORT-GATE-LENGTH INGAAS/INALAS MODFETS

被引：8

作者：

KETTERSON, AA ^{[1
]}

LASKAR, J ^{[1
]}

BROCK, TL ^{[1
]}

ADESIDA, I ^{[1
]}

KOLODZEY, J ^{[1
]}

AINA, OA ^{[1
]}

HIER, H ^{[1
]}

机构：

[1] ALLIED CORP,BENDIX AEROSP TECHNOL CTR,COLUMBIA,MD 21045

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2361 / 2363

页数：3

共 13 条

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[6] KOLODZEY J, 1988, JUN DEV RES C
[7] KINK EFFECT IN SUBMICROMETER-GATE MBE-GROWN INALAS/INGAAS/INALAS HETEROJUNCTION MESFETS
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[8] LESTER L, 1988, DEC IEDM SAN FRANC
[9] DEEP ELECTRON TRAPPING CENTERS IN SI-DOPED INALAS GROWN BY MOLECULAR-BEAM EPITAXY
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ASAHI, H
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 103 (02): : 511 - 516
[10] 0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ
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[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 374 - 376

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