PASSIVATION OF ION-BEAM DAMAGE IN METAL-OXIDE-SILICON STRUCTURES BY ROOM-TEMPERATURE HYDROGENATION

被引：5

作者：

KAR, S ^{[1
]}

SRIKANTH, K ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 24期

关键词：

D O I：

10.1063/1.106789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 angstrom. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

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页码：3001 / 3003

页数：3

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