PASSIVATION OF DRY-ETCHING DAMAGE USING LOW-ENERGY HYDROGEN IMPLANTS

被引：34

作者：

WANG, JS ^{[1
]}

FONASH, SJ ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] CHUNGNAM NATL UNIV,CHUNGNAM,SOUTH KOREA

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期

关键词：

D O I：

10.1109/EDL.1983.25792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：432 / 435

页数：4

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