PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM LITHOGRAPHY

被引：4

作者：

KATO, T

WATAKABE, Y

NAKATA, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1279 / 1285

页数：7

共 9 条

[1] PROXIMITY EFFECT DEPENDENCE ON SUBSTRATE MATERIAL
AIZAKI, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1726 - 1733
[2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[3] GROBMAN WD, 1980, IBM J RES DEV, V24, P530
[4] KERN DP, 1980, IBM J RES DEV, V24, P530
[5] QUANTITATIVE ELECTRON-MICROPROBE ANALYSIS OF THIN-FILMS ON SUBSTRATES
KYSER, DF
MURATA, K
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1974, 18 (04) : 352 - 363
[6] VOLTAGE DEPENDENCE OF PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY
KYSER, DF
TING, CH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1759 - 1763
[7] PATTERN PARTITIONING FOR ENHANCED PROXIMITY-EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
SCHREIBER, DE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (05) : 530 - 536
[8] PARIKH M, 1980, 9TH P INT C EL ION B
[9] WITTELS ND, 1978, 8TH P INT C EL ION B