FORMATION AND PROPERTIES OF (AU, AL, AG, IN) (INP-GAAS) SCHOTTKY DIODES - CONTRIBUTION OF THE SEMICONDUCTOR SURFACE TO THE DIODE CHARACTERISTICS

被引：15

作者：

LASSABATERE, L

ISMAIL, A

PALAU, JM

BENBRAHIM, A

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(86)90863-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：336 / 346

页数：11

共 39 条

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