FORMATION AND PROPERTIES OF (AU, AL, AG, IN) (INP-GAAS) SCHOTTKY DIODES - CONTRIBUTION OF THE SEMICONDUCTOR SURFACE TO THE DIODE CHARACTERISTICS

被引：15

作者：

LASSABATERE, L

ISMAIL, A

PALAU, JM

BENBRAHIM, A

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(86)90863-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：336 / 346

页数：11

共 39 条

[31] PHOTOEMISSION STUDY OF FORMATION OF SCHOTTKY BARRIERS
SPICER, WE
GREGORY, PE
CHYE, PW
BABALOLA, IA
SUKEGAWA, T
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 617 - 620
[32] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
CHYE, P
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[33] SPICER WE, 1979, J VACUUM SCI TECHNOL, V16, P422
[34] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS
SPITZER, WG
MEAD, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3061 - +
[35] SURFACE-DEFECTS ON SEMICONDUCTORS
WILLIAMS, RH
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 122 - 142
[36] METAL-GASE AND METAL-INP INTERFACES - SCHOTTKY-BARRIER FORMATION AND INTERFACIAL REACTIONS
WILLIAMS, RH
MCKINLEY, A
HUGHES, GJ
MONTGOMERY, V
MCGOVERN, IT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 594 - 598
[37] METAL CONTACTS ON SEMICONDUCTORS - THE ADSORPTION OF SB, SN, AND GA ON INP(110) CLEAVED SURFACES
WILLIAMS, RH
MCKINLEY, A
HUGHES, GJ
HUMPHREYS, TP
MAANI, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 561 - 568
[38] SURFACE DEFECT EFFECTS ON SCHOTTKY BARRIERS
WILLIAMS, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 929 - 936
[39] AL ON GAAS(110) INTERFACE - POSSIBILITY OF ADATOM CLUSTER FORMATION
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1981, 24 (08) : 4372 - 4391