REACTION-MECHANISM FOR FLUORINE ETCHING OF SILICON

[1] BAIR RA, UNPUB

[2] EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2221 - 2225

[3] BONDING IN TRANSITION-METAL-METHYLENE COMPLEXES .2. (RUCH2)+, A COMPLEX EXHIBITING LOW-LYING METHYLIDENE-LIKE AND CARBENE-LIKE STATES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (09) : 2180 - 2191

[4] BONDING IN TRANSITION-METAL METHYLENE COMPLEXES .3. COMPARISON OF CR AND RU CARBENES - PREDICTION OF STABLE LNM(CXY) SYSTEMS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (16) : 4746 - 4754

[5] THE CHROMIUM METHYLIDENE CATION - CRCH2+ [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (08) : 1485 - 1490

[6] CARTER EA, IN PRESS J PHYS CHEM

[7] GAUSSIAN BASIS FUNCTIONS FOR USE IN MOLECULAR CALCULATIONS .1. CONTRACTION OF (9S5P) ATOMIC BASIS SETS FOR FIRST-ROW ATOMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (07) : 2823 - +

[8] DUNNING TH, 1977, MODERN THEORETICAL C, V3, pCH1

[9] DISSOCIATION ENERGETICS OF SIF SYSTEMS OF RELEVANCE TO ETCHING REACTIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 87 (02) : 1307 - 1314

[10] DYNAMICS OF SIF4 DESORPTION DURING ETCHING OF SILICON BY XEF2 [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 87 (03) : 1866 - 1872

[1] BAIR RA, UNPUB

[2] EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2221 - 2225

[3] BONDING IN TRANSITION-METAL-METHYLENE COMPLEXES .2. (RUCH2)+, A COMPLEX EXHIBITING LOW-LYING METHYLIDENE-LIKE AND CARBENE-LIKE STATES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (09) : 2180 - 2191

[4] BONDING IN TRANSITION-METAL METHYLENE COMPLEXES .3. COMPARISON OF CR AND RU CARBENES - PREDICTION OF STABLE LNM(CXY) SYSTEMS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (16) : 4746 - 4754

[5] THE CHROMIUM METHYLIDENE CATION - CRCH2+ [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (08) : 1485 - 1490

[6] CARTER EA, IN PRESS J PHYS CHEM

[7] GAUSSIAN BASIS FUNCTIONS FOR USE IN MOLECULAR CALCULATIONS .1. CONTRACTION OF (9S5P) ATOMIC BASIS SETS FOR FIRST-ROW ATOMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (07) : 2823 - +

[8] DUNNING TH, 1977, MODERN THEORETICAL C, V3, pCH1

[9] DISSOCIATION ENERGETICS OF SIF SYSTEMS OF RELEVANCE TO ETCHING REACTIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 87 (02) : 1307 - 1314

[10] DYNAMICS OF SIF4 DESORPTION DURING ETCHING OF SILICON BY XEF2 [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 87 (03) : 1866 - 1872