HIGH-MOBILITY AND HIGH-STABILITY A-SI-H THIN-FILM TRANSISTORS WITH SMOOTH SINX/A-SI INTERFACE

被引：36

作者：

UCHIDA, H

TAKECHI, K

NISHIDA, S

KANEKO, S

机构：

[1] Functional Devices Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki, 216

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

A-SI; H TFT; SURFACE MORPHOLOGY; ATOMIC FORCE MICROSCOPE; SMOOTH SURFACE; FIELD EFFECT MOBILITY; INSTABILITY;

D O I：

10.1143/JJAP.30.3691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Through use of an atomic force microscope (AFM), surface morphologies for SiNx and a-Si:H films were investigated. By controlling deposition conditions, very smooth films have been obtained. The thin film transistor (TFT) with smooth a-Si:H on smooth SiNx has both high mobility (1.0 cm2.V-1.s-1) and high stability at the same time. This high-performance TFT will make an important impact in application to high-pixel-density liquid crystal displays (LCDs), such as for use in workstations and high-definition television (HDTV).

引用

页码：3691 / 3694

页数：4

共 8 条

[1] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].