DIRECT OBSERVATION OF SILICIDE GROWTH AT FE-SI INTERFACE DURING PULSED-LASER DEPOSITION

被引：20

作者：

CHUBUNOVA, EV

KHABELASHVILI, ID

LEBEDINSKII, YY

NEVOLIN, VN

ZENKEVICH, A

机构：

[1] Moscow Engineering Physics Institute

来源：

THIN SOLID FILMS | 1994年 / 247卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90473-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using X-ray photoelectron spectroscopy, the layer-by-layer growth of iron silicides has been studied in situ during pulsed laser deposition. Successive layers of FeSi2, FeSi and metallic Fe were identified in the case of Fe deposition on Si(100) substrate, while for Si deposition on Fe substrate practically no silicide was found to grow at the interface. The nature of the Fe-Si interaction at the interface is supposed to depend on the type and energy of the depositing particles.

引用

页码：39 / 43

页数：5

共 12 条

[1]

BYKOVSKII YA, 1987, ZH EKSP TEOR FIZ, V66, P285

[2]

COHEN RL, 1981, MATER RES SOC S P, V3, P357

[3] BONDING STATE OF SILICON SEGREGATED TO ALPHA-IRON SURFACES AND ON IRON SILICIDE SURFACES STUDIED BY ELECTRON-SPECTROSCOPY [J].