XPS INVESTIGATIONS OF FESI, FESI2 AND FE IMPLANTED IN SI AND GE

被引：32

作者：

KINSINGER, V

DEZSI, I

STEINER, P

LANGOUCHE, G

机构：

[1] UNIV SAARLAND,FACHBEREICH ANGEW PHYS 111,W-6600 SAARBRUCKEN,GERMANY

[2] CATHOLIC UNIV LEUVEN,INST KERN & STRALINGSFYS,B-3030 HEVERLE,BELGIUM

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 22期

关键词：

D O I：

10.1088/0953-8984/2/22/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polycrystalline FeSi and FeSi2 samples have been examined by ESCA experiments. The valence band spectra show features that can be attributed to bonding and non-bonding states, as is the case for other transition metal silicides, where bonding is expressed in terms of hybridisation. Furthermore the authors have investigated the photoelectron spectra of samples of Si and Ge implanted with Fe at an energy of 40 keV in order to draw some conclusions regarding the character of the Fe-Si bonding in the disordered layer. The concentration of Fe as a function of the sample depth was also determined and compared with the results of Monte Carlo calculations.

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页码：4955 / 4961

页数：7

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