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SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES - (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO2

被引：164
作者：
POLLMANN, J [1 ]
PANTELIDES, ST [1 ]
机构：
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源：
PHYSICAL REVIEW B | 1978年 / 18卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.18.5524
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5524 / 5544
页数：21
相关论文
共 74 条
  • [51] RESOLVENT METHOD FOR QUANTITATIVE CALCULATIONS ON SURFACE STATES AND ADSORPTION .2. ADSORPTION ON SHOCKLEY SURFACES
    LIEBMANN, SP
    VANDERAVOIRD, A
    FASSAERT, DJ
    [J]. PHYSICAL REVIEW B, 1975, 11 (04): : 1503 - 1507
  • [52] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS
    LOUIE, SG
    SCHLUTER, M
    CHELIKOWSKY, JR
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1654 - 1663
  • [53] MARADUDIN AA, 1971, SOLID STATE PHYS S3
  • [54] ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES
    MELE, EJ
    JOANNOPOULOS, JD
    [J]. PHYSICAL REVIEW B, 1978, 17 (04) : 1816 - 1827
  • [55] CALCULATION OF DENSITY OF STATES AT (100) AND (110) SURFACES OF MOLYBDENUM
    NOGUERA, C
    SPANJAARD, D
    JEPSEN, DW
    [J]. PHYSICAL REVIEW B, 1978, 17 (02): : 607 - 617
  • [56] COMPARATIVE-STUDY OF (111), (110) AND (100) SURFACES OF SILICON USING LOCAL DENSITY OF STATES METHOD APPLIED TO BOND ORBITAL MODEL
    ORTENBURGER, IB
    CIRACI, S
    BATRA, IP
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (22): : 4185 - 4201
  • [57] ELECTRONIC-STRUCTURE OF STEPPED TRANSITION-METAL SURFACES
    PAINTER, GS
    JENNINGS, PJ
    JONES, RO
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (10): : L199 - L202
  • [58] ATOMIC DENSITIES OF STATES NEAR SI (111) SURFACES
    PANDEY, KC
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 750 - 760
  • [59] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI
    PANDEY, KC
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1450 - 1453
  • [60] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111)
    PANDEY, KC
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (25) : 1433 - 1436
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