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IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MOLECULAR-BEAM EPITAXY GROWTH

被引：7
作者：
LIU, X
RANALLI, E
SATO, DL
LI, Y
LEE, HP
机构：
[1] Univ of California, Irvine
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词：
D O I：
10.1116/1.588152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed modeling of pyrometric radiation from AlAs/GaAs layered structures during molecular-beam epitaxy growth is presented. Based on simulations using an approximate form of this model and a novel phase estimator, a closed-loop control system was devised and tested. Experimental results are presented for a quarter-wavelength distributed Bragg reflector grown with and without closed-loop control. Improved accuracy is clearly evident for the layers grown with feedback control.
引用
收藏
页码：742 / 745
页数：4
相关论文
共 14 条
[1]  
ARMSTRONG JV, 1990, APPL PHYS LETT, V61, P2770
[2]   CLOSED-LOOP CONTROL OF GROWTH OF SEMICONDUCTOR-MATERIALS AND STRUCTURES BY SPECTROELLIPSOMETRY [J].
ASPNES, DE ;
QUINN, WE ;
TAMARGO, MC ;
GREGORY, S ;
SCHWARZ, SA ;
PUDENZI, MAA ;
BRASIL, MJSP ;
NAHORY, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :1840-1841
[3]   SIMULTANEOUS INSITU MEASUREMENT OF FILM THICKNESS AND TEMPERATURE BY USING MULTIPLE WAVELENGTHS PYROMETRIC INTERFEROMETRY (MWPI) [J].
BOEBEL, FG ;
MOLLER, H .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1993, 6 (02) :112-118
[4]   METHOD FOR ACCURATE GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
CHALMERS, SA ;
KILLEEN, KP .
APPLIED PHYSICS LETTERS, 1993, 62 (11) :1182-1184
[5]   ELIMINATION OF THE FLUX TRANSIENTS FROM MOLECULAR-BEAM EPITAXY SOURCE CELLS FOLLOWING SHUTTER OPERATION [J].
CHILTON, PA ;
TRUSCOTT, WS ;
WEN, YF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1099-1104
[6]   INSITU CONTROL OF GA(AL)AS MBE LAYERS BY PYROMETRIC INTERFEROMETRY [J].
GROTHE, H ;
BOEBEL, FG .
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :1010-1013
[7]  
HARBISON JP, 1992, MATER RES SOC S P, V177
[8]  
HELLMAN ES, 1986, J CRYST GROWTH, V81, P38
[9]   IN-SITU THICKNESS MONITORING AND CONTROL FOR HIGHLY REPRODUCIBLE GROWTH OF DISTRIBUTED BRAGG REFLECTORS [J].
HOUNG, YM ;
TAN, MRT ;
LIANG, BW ;
WANG, SY ;
MARS, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1221-1224
[10]  
HOUNG YM, 1993, UNPUB 4 INT C CHEM B
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