IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MOLECULAR-BEAM EPITAXY GROWTH

被引：7

作者：

LIU, X

RANALLI, E

SATO, DL

LI, Y

LEE, HP

机构：

[1] Univ of California, Irvine

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed modeling of pyrometric radiation from AlAs/GaAs layered structures during molecular-beam epitaxy growth is presented. Based on simulations using an approximate form of this model and a novel phase estimator, a closed-loop control system was devised and tested. Experimental results are presented for a quarter-wavelength distributed Bragg reflector grown with and without closed-loop control. Improved accuracy is clearly evident for the layers grown with feedback control.

引用

页码：742 / 745

页数：4