SURFACE ORDERING OF THE MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001)-2X4-AS RECONSTRUCTION

被引：42

作者：

ZHOU, JM ^{[1
]}

XUE, QK ^{[1
]}

CHAYA, H ^{[1
]}

HASHIZUME, T ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Our scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) showed that the intensity of the two-fourths fractional order feature in the RHEED pattern for the GaAs(001)-2X4 structure reflects the degree of ordering of the vacancy rows. The STM images show a high degree of surface ordering only when the RHEED produces nearly-the equal intensity sharp streaks for all the fourfold fractional order diffraction. Two possible mechanisms, are suggested to explain the observed STM-RHEED correlation.

引用

页码：583 / 585

页数：3

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