SURFACE MOBILITY IN N+ AND P+ DOPED POLYSILICON GATE PMOS TRANSISTORS

被引：8

作者：

AMM, DT ^{[1
]}

MINGAM, H ^{[1
]}

DELPECH, P ^{[1
]}

DOUVILLE, TT ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：963 / 968

页数：6

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