THE EFFECT OF CHANNEL IMPLANTS ON MOS-TRANSISTOR CHARACTERIZATION

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 89 - 93

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] FERRANI P, 1986, THESIS LEHIGH U BETH

[6] TECHNIQUES FOR DETERMINING THRESHOLD [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 169 - 172

[7] VLSI PROCESS MODELING - SUPREM-III [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1438 - 1453

[8] Jaeger R. C., 1983, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-2, P111, DOI 10.1109/TCAD.1983.1270027

[9] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 423 - &

[10] COMPENSATED MOSFET DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 359 - 373

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 89 - 93

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] FERRANI P, 1986, THESIS LEHIGH U BETH

[6] TECHNIQUES FOR DETERMINING THRESHOLD [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 169 - 172

[7] VLSI PROCESS MODELING - SUPREM-III [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1438 - 1453

[8] Jaeger R. C., 1983, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-2, P111, DOI 10.1109/TCAD.1983.1270027

[9] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 423 - &

[10] COMPENSATED MOSFET DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 359 - 373