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[13] KRUTSICK TJ, IN PRESS CHARACTERIZ

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[16] OLDHAM HE, 1983, P IEE JUN

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[20] ON THE ACCURACY OF CHANNEL LENGTH CHARACTERIZATION OF LDD MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1556 - 1562

[11] COMPUTER SOLUTION OF ONE-DIMENSIONAL POISSONS EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) : 329 - 333

[12] AN IMPROVED METHOD OF MOSFET MODELING AND PARAMETER EXTRACTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1676 - 1680

[13] KRUTSICK TJ, IN PRESS CHARACTERIZ

[14] COMPARISON OF DRAIN STRUCTURES IN N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 140 - 144

[15] AN IMPROVED DEFINITION FOR THE ONSET OF HEAVY INVERSION IN AN MOS STRUCTURE WITH NONUNIFORMLY DOPED SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1222 - 1230

[16] OLDHAM HE, 1983, P IEE JUN

[17] MODEL FOR THE CHANNEL-IMPLANTED ENHANCEMENT-MODE IGFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 955 - 964

[18] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &

[19] SODINI CG, 1982, SOLID ST ELECTRON, V25, P831

[20] ON THE ACCURACY OF CHANNEL LENGTH CHARACTERIZATION OF LDD MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1556 - 1562