WAVELENGTH DEPENDENCE OF THE EMISSION OF A DOUBLE-HETEROJUNCTION GAAS-ALGAAS INJECTION-LASER IN A STRONG MAGNETIC-FIELD

The emission energy of continuously operated double-heterostructure GaAs-AlGaAs lasers has been measured in magnetic fields up to 15 T and temperatures of 4.2 and 50 K. For lasers with a p-active region the observed shift in the emission energy can be described by a change in the position of the quasi-Fermi level of the conduction band as a function of the magnetic field. The measurements provide a determination of the carrier density at threshold and verify the assumption that the matrix element for the optical transition is in first order independent of the applied magnetic field.