SOLUTION HARDENING AND DISLOCATION DENSITY REDUCTION IN CDTE CRYSTALS BY ZN ADDITION

被引：64

作者：

GUERGOURI, K

TRIBOULET, R

TROMSONCARLI, A

MARFAING, Y

机构：

[1] CNRS, Meudon, Fr, CNRS, Meudon, Fr

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90699-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：61 / 65

页数：5

共 14 条

[1] LOCAL-STRUCTURE OF TERNARY SEMICONDUCTING RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF CD1-XMNXTE
BALZAROTTI, A
CZYZYK, M
KISIEL, A
MOTTA, N
PODGORNY, M
ZIMNALSTARNAWSKA, M
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2295 - 2298
[2] CRYSTAL-GROWTH OF CD1-XZNXTE AND ITS USE AS A SUPERIOR SUBSTRATE FOR LPE GROWTH OF HG0.8CD0.2TE
BELL, SL
SEN, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 112 - 115
[3] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION
EHRENREICH, H
HIRTH, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 668 - 670
[4] GURUSWAMY S, 1986, J APPL PHYS, V60, P12
[5] BLOCKING OF THREADING DISLOCATIONS BY HG1-XCDXTE EXPITAXIAL LAYERS
JAMES, TW
STOLLER, RE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 56 - 58
[6] ELASTIC-CONSTANTS AND THEIR PRESSURE DEPENDENCES IN CD1-XMNXTE WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.52 AND IN CD0.52ZN0.48TE
MAHESWARANATHAN, P
SLADEK, RJ
DEBSKA, U
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5212 - 5216
[7] MCSHIMIN HG, 1962, J APPL PHYS, V33, P56
[8] RANDOM DISTRIBUTION AND MISCIBILITY OF CD1-XZNXTE ALLOY FROM EXAFS
MOTTA, N
BALZAROTTI, A
LETARDI, P
KISIEL, A
CZYZYK, MT
ZIMNALSTARNAWSKA, M
PODGORNY, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 205 - 209
[9] EFFECTS INFLUENCING THE STRUCTURAL INTEGRITY OF SEMICONDUCTORS AND THEIR ALLOYS
SHER, A
CHEN, AB
SPICER, WE
SHIH, CK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 105 - 111
[10] DISLOCATION ENERGIES AND HARDNESS OF SEMICONDUCTORS
SHER, A
CHEN, AB
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 54 - 56

← 1 2 →