PRODUCTION OF SILICON-OXIDES FROM GLOW-DISCHARGE DECOMPOSITION OF SILANE AND NITRIC-OXIDE

被引：2

作者：

EAGLE, DJ

MILNE, WI

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 23期

关键词：

D O I：

10.1049/el:19860852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1243 / 1244

页数：2

共 11 条

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[3]

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[5]

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[6]

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ESTES, RD ;

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[8] DEPOSITION OF THIN-FILMS BY DECOMPOSITION OF TETRA-ETHOXY SILANE IN A RADIO-FREQUENCY GLOW-DISCHARGE [J].

MUKHERJEE, SP ;

EVANS, PE .

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[9] PLASMA DEPOSITION OF INORGANIC SILICON CONTAINING FILMS [J].

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[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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