ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE

被引:225
作者
GATES, SM
机构
关键词
D O I
10.1016/0039-6028(88)90798-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:307 / 329
页数:23
相关论文
共 27 条
[11]   THE ACTIVATION OF ALKANES ON NI(100) [J].
HAMZA, AV ;
MADIX, RJ .
SURFACE SCIENCE, 1987, 179 (01) :25-46
[12]   SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J].
HENDERSON, RC ;
HELM, RF .
SURFACE SCIENCE, 1972, 30 (02) :310-+
[13]  
Hess D, 1985, REV CHEM ENG, V3, P97
[14]   OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J].
HOLLINGER, G ;
HIMPSEL, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :640-645
[15]  
IMBIHL R, UNPUB
[16]   VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 [J].
ITOH, U ;
TOYOSHIMA, Y ;
ONUKI, H ;
WASHIDA, N ;
IBUKI, T .
JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) :4867-4872
[17]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].
JOYCE, BA ;
BRADLEY, RR ;
BOOKER, GR .
PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&
[18]   REACTION-MECHANISM IN CHEMISORPTION KINETICS - NITROGEN ON (100) PLANE OF TUNGSTEN [J].
KING, DA ;
WELLS, MG .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1974, 339 (1617) :245-269
[19]  
Melander L, 1980, REACTION RATES ISOTO
[20]  
MEYERSON BS, 1987, CHEMTRONICS, V1, P155