CHARGE-COUPLED IMAGING DEVICES - DESIGN CONSIDERATIONS

被引：43

作者：

AMELIO, GF

BERTRAM, WJ

TOMPSETT, MF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1971.17320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：986 / +

页数：1

共 13 条

[1] AMMELIO GF, TO BE PUBLISHED
[2] CHARGE COUPLED SEMICONDUCTOR DEVICES
BOYLE, WS
SMITH, GE
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +
[3] BREIMER H, 1967, PHILIPS TECH REV, V28, P336
[4] SURFACE CHARGE TRANSPORT IN SILICON
ENGELER, WE
TIEMANN, JJ
BAERTSCH, RD
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 469 - &
[5] GROVE AS, 1967, PHYS TECHNOL S, P298
[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +
[7] LINEARIZED DISPERSION RELATION AND GREENS FUNCTION FOR DISCRETE-CHARGE-TRANSFER DEVICES WITH INCOMPLETE TRANSFER
JOYCE, WB
BERTRAM, WJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1971, 50 (06): : 1741 - +
[8] KAHNG D, PRIVATE COMMUNICATIO
[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[10] NONLINEAR DIFFUSION ANALYSIS OF CHARGE-COUPLED-DEVICE TRANSFER
STRAIN, RJ
SCHRYER, NL
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1971, 50 (06): : 1721 - +