Improved emitter-base junction with In2O3 in dielectric-base transistor

被引：4

作者：

Hato, T ^{[1
]}

Takauchi, H ^{[1
]}

Yoshida, A ^{[1
]}

Tamura, H ^{[1
]}

Fujimaki, N ^{[1
]}

Oshima, Y ^{[1
]}

Yokoyama, N ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,INTERDISCIPLINARY GRAD SCH SCI & ENGN,DEPT MAT SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12A期

关键词：

dielectric-base transistor; superconductor; heterostructure; junction; diode; YBCO; In2O3; SrTiO3;

D O I：

10.1143/JJAP.34.6379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied In2O3 for use as an intermediate layer between the YBCO emitter electrode and the SrTiO3 base region of dielectric-base transistors (DBT). We fabricated and tested a YBCO(001)/In2O3(100)/SrTiO3(110) heterostructure by using a laser-ablation deposition technique with high-density targets. Our YBCO/In-2 O-3/n-SrTiO3 diode structure showed a current density that was one order of magnitude larger than with an MgO intermediate layer.

引用

收藏

页码：6379 / 6381

页数：3

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