GAIN SUPPRESSION IN SEMICONDUCTOR-LASERS - THE INFLUENCE OF DYNAMIC CARRIER TEMPERATURE-CHANGES

[11] SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1765 - 1767

[12] SEEGER K, 1973, SEMICONDUCTOR PHYSIC, P374

[13] SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2

[14] OBSERVATIONS OF SUBPICOSECOND DYNAMICS IN GAALAS LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1722 - 1724

[15] HIGH-SPEED MODULATION OF SEMICONDUCTOR-LASERS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1180 - 1192

[16] HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) : 385 - 393

[17] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2653 - 2664

[18] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749

[11] SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1765 - 1767

[12] SEEGER K, 1973, SEMICONDUCTOR PHYSIC, P374

[13] SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2

[14] OBSERVATIONS OF SUBPICOSECOND DYNAMICS IN GAALAS LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1722 - 1724

[15] HIGH-SPEED MODULATION OF SEMICONDUCTOR-LASERS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1180 - 1192

[16] HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) : 385 - 393

[17] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2653 - 2664

[18] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749