QUANTITATIVE IN-DEPTH PROFILE OF PASSIVATED OXIDE LAYERS OF GAAS BY AES-SIMS - COMPARISON OF THERMAL, ANODIC AND PLASMA OXIDATIONS

被引：13

作者：

WATANABE, K

HASHIBA, M

YAMASHINA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：335 / 340

页数：6

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