SPUTTERING YIELDS OF THIN OVERLAYER FILMS BY ATTENUATION OF THE SUBSTRATE AUGER-ELECTRON SIGNAL

被引:2
作者
PAPAGNO, L
LUZZI, G
MEUTI, M
机构
[1] Dipartimento di Fisica, Università della Calabria, Cosenza
关键词
D O I
10.1016/0040-6090(79)90076-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The sputtering yield S of the first oxide layers of 304 stainless steel has been measured by monitoring the bulk MVV 48 eV Auger electron intensity of elemental iron during ion etching. For comparison the same procedure has been applied to a gold layer of thickness 65 Å on a copper substrate for 920 eV copper Auger electrons. Assuming literature values of the mean free path, the experimental S values for stainless steel and gold under 6 keV Ar+ ion bombardment with a 30° angle of incidence are 1 and 7 respectively. The same technique gives information about overlayer film continuity and non-uniformity. © 1979.
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页码:307 / 312
页数:6
相关论文
共 19 条
[1]  
ABATINO C, UNPUBLISHED
[2]   AUGER-ELECTRON SPECTROSCOPY STUDY OF 18-8 STAINLESS-STEEL OXIDATION [J].
ALLEN, GC ;
WILD, RK .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :409-415
[3]   HE+ BACKSCATTERING AND AUGER-ELECTRON SPECTROSCOPY STUDY OF THE ION-INDUCED MODIFICATION OF COPPER-FILMS DEPOSITED ON SINGLE-CRYSTAL SILICON [J].
BAERI, P ;
LUZZI, G ;
PAPAGNO, L .
THIN SOLID FILMS, 1979, 56 (03) :349-356
[4]  
BOHDANSKY J, 1976, 9TH P S FUS TECHN GA
[5]   GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].
CHANG, CC .
SURFACE SCIENCE, 1975, 48 (01) :9-21
[6]   OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].
CHANG, CC ;
BOULIN, DM .
SURFACE SCIENCE, 1977, 69 (02) :385-402
[7]  
CHANG CC, 1974, CHARACTERIZATION SOL, P509
[8]   SPUTTERING IN SURFACE ANALYSIS OF SOLIDS - DISCUSSION OF SOME PROBLEMS [J].
COBURN, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1037-1044
[9]  
FIERMANS L, 1977, ADV ELECTRON ELECTRO, V43, P139
[10]   ION-INDUCED MIGRATION OF CU INTO SI [J].
HART, RR ;
DUNLAP, HL ;
MARSH, OJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1947-1951