ION-INDUCED MIGRATION OF CU INTO SI

[1] Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[2] BACK H, 1974, RADIAT EFF, V21, P31

[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[4] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[5] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[6] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[7] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618

[8] DETECTION SENSITIVITY OF HEAVY IMPURITIES IN SI USING 280 KEV HE2+ AND C2+ BACKSCATTERING [J]. THIN SOLID FILMS, 1973, 19 (01) : 137 - 144

[9] ENHANCED MIGRATION OF IMPLANTED SB AND IN IN SI COVERED WITH EVAPORATED AL [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 76 - &

[10] RELATIONSHIP BETWEEN SPUTTER CLEANING PARAMETERS AND SURFACE CONTAMINANTS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2504 - 2508

[1] Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[2] BACK H, 1974, RADIAT EFF, V21, P31

[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[4] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[5] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[6] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[7] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618

[8] DETECTION SENSITIVITY OF HEAVY IMPURITIES IN SI USING 280 KEV HE2+ AND C2+ BACKSCATTERING [J]. THIN SOLID FILMS, 1973, 19 (01) : 137 - 144

[9] ENHANCED MIGRATION OF IMPLANTED SB AND IN IN SI COVERED WITH EVAPORATED AL [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 76 - &

[10] RELATIONSHIP BETWEEN SPUTTER CLEANING PARAMETERS AND SURFACE CONTAMINANTS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2504 - 2508