GAS-TEMPERATURE-CONTROLLED (GTC) CVD OF ALUMINUM AND ALUMINUM-SILICON ALLOY FILM FOR VLSI PROCESSING

被引：15

作者：

SEKIGUCHI, A

KOBAYASHI, T

HOSOKAWA, N

ASAMAKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2134 / L2136

页数：3

共 13 条

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