REVERSE BREAKDOWN IN GAAS-MESFETS

[1] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185

[2] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1548 - 1552

[3] DAVID JPR, 1985, I PHYS C SER, V74, P247

[4] DAVID JPR, 1984, 11TH INT S GAAS REL

[5] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970

[6] MICROWAVE-POWER GAAS MISFETS WITH UNDOPED ALGAAS AS AN INSULATOR [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 494 - 495

[7] Sze SM., 2006, PHYS SEMICONDUCTOR D, DOI [DOI 10.1002/9780470068328.CH3, DOI 10.1002/0470068329]

[8] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1013 - 1018

[9] THEORETICAL-ANALYSIS OF THE DC AVALANCHE BREAKDOWN IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 154 - 159

[1] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185

[2] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1548 - 1552

[3] DAVID JPR, 1985, I PHYS C SER, V74, P247

[4] DAVID JPR, 1984, 11TH INT S GAAS REL

[5] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970

[6] MICROWAVE-POWER GAAS MISFETS WITH UNDOPED ALGAAS AS AN INSULATOR [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 494 - 495

[7] Sze SM., 2006, PHYS SEMICONDUCTOR D, DOI [DOI 10.1002/9780470068328.CH3, DOI 10.1002/0470068329]

[8] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1013 - 1018

[9] THEORETICAL-ANALYSIS OF THE DC AVALANCHE BREAKDOWN IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 154 - 159