PHOTOABSORPTION CROSS SECTION FOR SILICON DOPED WITH INDIUM

被引：15

作者：

MESSENGER, RA

BLAKEMORE, JS

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 4卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.4.1873

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1873 / +

页数：1

共 11 条

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[4]

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[5]

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[7]

MESSENGER RA, 1970, B AM PHYS SOC, V15, P1342

[8] PHOTO-IONIZATION CROSS-SECTION OF INDIUM ACCEPTORS IN SILICON [J].

MESSENGER, RA ;

BLAKEMORE, JS .

SOLID STATE COMMUNICATIONS, 1971, 9 (05) :319-+

[9] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON [J].

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[10] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].

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