IMPACT OF OXYGEN RELATED EXTENDED DEFECTS ON SILICON DIODE CHARACTERISTICS

被引：88

作者：

VANHELLEMONT, J

SIMOEN, E

KANIAVA, A

LIBEZNY, M

CLAEYS, C

机构：

[1] IMEC, B-3001 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.359209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical activity of extended lattice defects formed by interstitial oxygen precipitation in silicon is studied. Their impact on diode characteristics and on minority carrier lifetime is addressed for different initial oxygen contents and pretreatments. The carrier traps present in the substrate are studied with deep level transient spectroscopy and with photoluminescence spectroscopy. The obtained electrical results are correlated with those of structural and chemical characterization using cross-section transmission electron microscopy and Fourier transform infrared spectroscopy. © 1995 American Institute of Physics.

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页码：5669 / 5676

页数：8

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