GA-GAAS-GAP SYSTEM - PHASE CHEMISTRY AND SOLUTION GROWTH OF GAASXP1-X

Liquidus isotherms at 900°, 1000°, 1100°, 1200° and 1300°C have been determined for the GaAsχP1-χ primary phase field of the GaGaAsGaP ternary system. The corresponding solidus isotherms were determined at 900°, 1100°, 1200° and 1300°C and crystallization paths for the solid and liquid estimated. The ternary phase diagram was used to establish the conditions for liquid epitaxial growth of GaAsχP1-χ layers on GaP and for the growth of crystallites of predictable composition. No solid-solid miscibility gap was observed in the temperature range studied. © 1969.