A GRAIN-BOUNDARY OF ALPHA-SIC BICRYSTALS

被引：14

作者：

UEMURA, Y

INOMATA, Y

INOUE, Z

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1981年 / 16卷 / 08期

关键词：

D O I：

10.1007/BF00542405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2333 / 2335

页数：3

共 13 条

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[5]

INOMATA Y, 1980, J CERAM SOC JAPAN, V88, P61

[6]

INOMATA Y, 1974, SILICON CARBIDE 1973, P133

[7] A SIC BICRYSTAL JUNCTION ON THE (0 0 0 1) PLANE [J].

INOUE, Z ;

UEMURA, Y ;

INOMATA, Y .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (08) :2297-2302

[8]

Lely A, 1955, BER DEUT KERAM GES, V8, P229

[9] INTERPRETATION OF INTRINSIC SURFACE-STATES ON SI(111) SURFACE [J].

NISHIDA, M .

PHYSICS LETTERS A, 1977, 63 (02) :128-130

[10] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J].

PANDEY, KC ;

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PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1433-1436

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