RHEED INTENSITY OSCILLATION DURING EPITAXIAL-GROWTH OF LAYERED MATERIALS

被引：3

作者：

SHIMADA, T

YAMAMOTO, H

SAIKI, K

KOMA, A

机构：

[1] Department of Chemistry, University of Tokyo, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Crystal growth; Epitaxy; Layered material; NbSe[!sub]2[!/sub; MoSe[!sub]2[!/sub; Polytype; RHEED oscillation;

D O I：

10.1143/JJAP.29.L2096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffracted beam intensities in reflection high energy electron diffraction (RHEED) have been observed to oscillate during the epitaxial growth of NbSe2and MoSe2on GaAs(111) infstrates. This is the first observation of RHEED oscillation in layered materials, to the author's knowledge. Monolayer- and bilayer-mode oscillations have been observed at different diffraction points. The existence of the bilayer-mode oscillation leads to the determination of the polytype of the grown films. it has also been shown that the antiphase portion of the grown film is considerably small. © 1990 IOP Publishing Ltd.

引用

页码：L2096 / L2098

页数：3

共 9 条

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