ANALYTICAL MODEL FOR THE CURRENT VOLTAGE CHARACTERISTICS OF A SILICON RESISTOR AT LIQUID-HELIUM TEMPERATURES

被引：6

作者：

SIMOEN, E

DIERICKX, B

DEFERM, L

CLAEYS, C

机构：

[1] IMEC, B-3001 Leuven

来源：

CRYOGENICS | 1990年 / 30卷 / 12期

关键词：

SILICON; RESISTOR; CHARGE TRANSPORT; SHALLOW-LEVEL BREAKDOWN;

D O I：

10.1016/0011-2275(90)90225-2

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

A simple analytical model for the current - voltage behaviour of silicon resistor at liquid helium temperature (LHeT) is presented. It is derived from a more sophisticated analysis, taking account of impurity breakdown by impact ionization and of barrier-limited (BL) and space-charge-limited (SCL) current flow. As will be shown, the turn-on/turn-off hysteresis can be understood by considering the slow, 'forced' build-up of a depletion region at the injecting contact. Both material-(technology-)related parameters and measurement history determine the injection threshold of the device. This breakdown/hysteresis behaviour is also seen in the characteristics of more 'complicated' devices at LHeT and enhances parasitic phenomena in cryogenic circuitry.

引用

页码：1152 / 1159

页数：8

共 29 条

[1] IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT-ELECTRONS IN N-SI AT LOW-TEMPERATURES [J].