A PILE-UP PHENOMENON DURING ARSENIC DIFFUSION IN SILICON-ON-INSULATOR STRUCTURES FORMED BY OXYGEN IMPLANTATION

被引：20

作者：

NORMAND, P ^{[1
]}

TSOUKALAS, D ^{[1
]}

GUILLEMOT, N ^{[1
]}

CHENEVIER, P ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,CNRS,UA 840,F-38031 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3585 / 3589

页数：5

共 27 条

[1] TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE [J].

ANGELUCCI, R ;

NEGRINI, P ;

SOLMI, S .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1468-1470

[2] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[3] SILICON INTERSTITIAL GENERATION BY ARGON IMPLANTATION [J].

BRONNER, GB ;

PLUMMER, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :510-512

[4] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1985, 54 (04) :360-363

[5] A practical method for numerical evaluation of solutions of partial differential equations of the heat-conduction type [J].

Crank, J ;

Nicolson, P .

ADVANCES IN COMPUTATIONAL MATHEMATICS, 1996, 6 (3-4) :207-226

[6]

DAVIS JR, 1987, UNPUB P ESS CERC 87

[7]

DOUGLAS EC, 1974, IEEE T ELECTRON DEV, VED21, P324, DOI 10.1109/T-ED.1974.17924

[8]

Fair R., 1981, IMPURITY DOPING PROC

[9]

Forsythe G.E., 1960, FINITE DIFFERENCE ME

[10]

GIBBONS JF, 1975, PROJECTED RANGE STAT

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