CALCULATION OF THE TEMPERATURE DURING ELECTRON PULSE ANNEALING OF SILICON

被引：9

作者：

TOULEMONDE, M

SIFFERT, P

机构：

来源：

APPLIED PHYSICS | 1981年 / 25卷 / 02期

关键词：

D O I：

10.1007/BF00901286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：139 / 142

页数：4

共 18 条

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[4]

BELL AE, 1979, RCA REV, V40, P295

[5] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

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TOULEMONDE, M ;

SIFFERT, P .

APPLIED PHYSICS, 1979, 19 (03) :313-319

[6]

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[7]

CARSLAW MS, 1959, CONDUCTION HEAT SOLI, P10

[8] SPATIAL DISTRIBUTION OF FLUORESCENT RADIATION EMISSION CAUSED BY AN ELECTRON BEAM [J].

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CALEDONIA, G .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3767-+

[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

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[10]

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