ELECTROLUMINESCENCE INVESTIGATIONS OF ELECTRON AND HOLE RESONANT TUNNELING IN P-I-N DOUBLE-BARRIER STRUCTURES

被引：24

作者：

WHITE, CRH ^{[1
]}

EVANS, HB ^{[1
]}

EAVES, L ^{[1
]}

MARTIN, PM ^{[1
]}

HENINI, M ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.45.9513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electroluminescence and current-voltage characteristics of a p-i-n double-barrier structure based on GaAs/AlAs are investigated. Electroluminescence lines due to carrier recombination in the GaAs contact layers and in the quantum well are observed. The bias dependence of the intensity of these lines exhibits the pronounced peaks that are also seen in the I(V) characteristics, which are due to electron and hole resonant tunneling. The quantum-well emission lines correspond to recombination of holes in the two lowest-energy valence subbands (LH1 and HH1). Their relative intensities indicate that the hole population in these subbands is inverted over a wide range of bias. A rapid cooling of the holes is observed when the electron density in the quantum well is high.

引用

页码：9513 / 9516

页数：4

共 18 条

[1]

BASTARD G, 1988, WAVE MECHANICS APPLI

[2] INJECTION INTERSUBBAND RELAXATION AND RECOMBINATION IN GaAs MULTIPLE QUANTUM WELLS. [J].

Bimberg, D. ;

Christen, J. ;

Steckenborn, A. ;

Weimann, G. ;

Schlapp, W. .

Journal of Luminescence, 1984, 30 (1-4) :562-579

[3] NONTHERMAL OCCUPATION OF HIGHER SUBBANDS IN SEMICONDUCTOR SUPERLATTICES VIA SEQUENTIAL RESONANT TUNNELING [J].

GRAHN, HT ;

SCHNEIDER, H ;

RUHLE, WW ;

VONKLITZING, K ;

PLOOG, K .

PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2426-2429

[4] INTERSUBBAND EMISSION FROM SEMICONDUCTOR SUPERLATTICES EXCITED BY SEQUENTIAL RESONANT TUNNELING [J].

HELM, M ;

ENGLAND, P ;

COLAS, E ;

DEROSA, F ;

ALLEN, SJ .

PHYSICAL REVIEW LETTERS, 1989, 63 (01) :74-77

[5] PHONON-SCATTERING AND MOBILITY OF HOLES IN A GAAS/ALAS QUANTUM-WELL [J].

KELSALL, RW ;

WOOD, ACG ;

ABRAM, RA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) :841-849

[6] DENSITY DEPENDENCE OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATES IN A GATED GAAS/GA1-XALXAS MODULATION-DOPED QUANTUM WELL [J].

LIU, HW ;

DELALANDE, C ;

BASTARD, G ;

VOOS, M ;

PETER, G ;

FISCHER, R ;

GOBEL, EO ;

BRUM, JA ;

WEIMANN, G ;

SCHLAPP, W .

PHYSICAL REVIEW B, 1989, 39 (18) :13537-13540

[7] RESONANT MAGNETOTUNNELING OF ELECTRONS AND HOLES IN A P-I-N-DIODE DEVICE INCORPORATING A DOUBLE BARRIER STRUCTURE [J].

MARTIN, PM ;

HAYDEN, RK ;

WHITE, CRH ;

HENINI, M ;

EAVES, L ;

MAUDE, DK ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B456-B459

[8] RADIATIVE RECOMBINATION COEFFICIENT OF FREE-CARRIERS IN GAAS-AIGAAS QUANTUM-WELLS AND ITS DEPENDENCE ON TEMPERATURE [J].

MATSUSUE, T ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1429-1431

[9] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

[10] OPTICAL PROCESSES OF 2D ELECTRON-PLASMA IN GAAS-(ALGA) AS HETEROSTRUCTURES [J].

PINCZUK, A ;

SHAH, J ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1984, 50 (08) :735-739

← 1 2 →