HIGH-TEMPERATURE CW OPERATION OF INGAASP-INP SEMIINSULATING BURIED HETEROSTRUCTURE LASERS USING REACTIVE ION-ETCHING TECHNIQUE

被引：14

作者：

HIGASHI, T

TAKEUCHI, T

MORITO, K

MATSUDA, M

SODA, H

机构：

[1] Optical Semiconductor Devices Laboratory, Fujitsu Laboratories, Ltd., Kanagawa 243-01, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 08期

关键词：

D O I：

10.1109/68.403986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated 1.5-mu m semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition, A very high CW operating temperature of 150 degrees C was obtained in a 300-mu m-long laser whose rear facet was HR-coated.

引用

页码：828 / 829

页数：2

共 6 条

[1] FABRICATION OF INGAASP/INP BURIED HETEROSTRUCTURE LASER USING REACTIVE ION ETCHING AND METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].