IMPROVED INP REGROWTH PROPERTIES IN METALORGANIC VAPOR-PHASE EPITAXY BY ADDITION OF CCL4

被引：22

作者：

NORDELL, N

BORGLIND, J

机构：

[1] Swedish Institute of Microelectronics, S-164 21 Kista

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective and planar regrowth of InP around stripe mesas up to 5.5-mu-m height formed with reactive ion etching in InP substrates has been made with metalorganic vapor phase epitaxy by adding CCl4 to the process gases. CCl4 seems to prevent nucleation on the phosphorous-rich {111}B lattice planes and on the silicon-nitride cap at the top of the mesa and hence permits reproducible regrowth with desired morphologies for integration of optoelectronic circuits at mesas oriented along the [110] direction. The addition of CCl4 does not influence dopant capability or the semi-insulating properties of Fe-doped material, for which a resistivity of 1x10(9) OMEGA-cm has been obtained.

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页码：22 / 24

页数：3

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