MOVPE GROWTH OF INP AROUND REACTIVE ION ETCHED MESAS

We present a study of temporally resolved metalorganic vapour phase epitaxial growth of InP around reactive ion etched mesas in InP substrates. The experiments were performed at substrate temperatures in the range 580 to 680-degrees-C and for reactor pressures between 30 and 300 mbar. The planarity is primarily affected by substrate temperature, but to some extent also by the pressure. Planar and selective embedding is obtained around 1-mu-m wide and 1-4-mu-m high mesas at reactor pressures of 100 mbar and below. and for temperatures above 650-degrees-C without formation of any mask overhang. Overgrowth at low temperatures is found to be due to high growth rate at the mesa walls.