SELECTIVE GROWTH OF INP ON PATTERNED, NONPLANAR INP SUBSTRATES BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

The effects of indium sources, mask materials and etched mesa profiles on growth morphology of Fe-doped semi-insulating InP on patterned, nonplanar InP substrates were studied for low-pressure organometallic vapor phase epitaxy (OMVPE). The presence or absence of polycrystalline InP layers deposited on the mask was found to depend on the indium source but not on the mask material. Trimethylindium was found to be the preferable indium source for prevention of polycrystalline InP deposits on the mask. The etched mesa shape was found to dominate the final geometry of the OMVPE re-grown InP layer. Inclusion of an interfacial layer of 1.16 mu-m bandgap wavelength InGaAsP between the dielectric mask and InP substrate produces a favorable mesa shape by controlling the level of undercut during mesa etching, so as to form a smooth mesa profile. After selective regrowth of InP over the resulting mesa, a planar surface is typically achieved for mesa stripes with a mask overhang length as long as 2.6 mu-m and a mesa height as high as 4 mu-m.