FABRICATION OF INGAASP/INP BURIED HETEROSTRUCTURE LASER USING REACTIVE ION ETCHING AND METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

LEE, BT

LOGAN, RA

KALICEK, RF

SERGENT, AM

COBLENTZ, DL

WECHT, KW

TANBUNEK, T

机构：

[1] AT&T Bell Labs, Chonnam National University, Murray Hill, Kwangju, NJ

[2] AT&T Bell Labs, Murray Hill, NJ

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 03期

关键词：

D O I：

10.1109/68.205611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.3 mum InGaAsP/InP buried heterostructure lasers were fabricated using CH4/H-2 reactive ion etching (RIE) for mesa definition and metalorganic chemical vapor deposition for blocking layer growth. Results show that high quality lasers can be made using RIE, with threshold current as low as 10 mA. It was also found that a slight chemical etching of the RIE mesas was necessary to obtain lasers with as high quality as those fabricated entirely by wet etching.

引用

页码：279 / 281

页数：3

共 9 条

[1]

HAYES TR, 1991, SPIE C LOS ANGELES, V1418

[2]

KALICEK RF, IN PRESS J CRYSTAL G

[3] 1.55-MU-M BURIED HETEROSTRUCTURE LASER VIA REGROWTH OF SEMIINSULATING INP-FE AROUND VERTICAL MESAS FABRICATED BY REACTIVE ION ETCHING USING METHANE AND HYDROGEN [J].