BURIED HETEROSTRUCTURE LASER FABRICATED USING REACTIVE ION ETCHING AND GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：10

作者：

LIEVIN, JL

LEGOUEZIGOU, L

BONNEVIE, D

GABORIT, F

POINGT, F

BRILLOUET, F

机构：

[1] Alcatel Alsthom Recherche, 91460 Marcoussis, Route de Nozay

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Buried heterostructure lasers fabricated using reactive ion etching for stripe definition and gas source molecular beam epitaxy for blocking layer regrowth are presented for the first time. The structure design includes, in particular, a nonselective epitaxial regrowth step as well as a III-V material lift-off. Preliminary results show continuous wave operation with threshold currents of 43 mA and maximum output power of 17 mW per facet. This process is, in particular, very well suited for integration purposes and high yield 2 in. wafer processing.

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页码：1211 / 1213

页数：3

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