BURIED HETEROSTRUCTURE LASER FABRICATED USING 3-STEP GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：4

作者：

LIEVIN, JL

BONNEVIE, D

POINGT, F

STARCK, C

SIGOGNE, D

LEGOUEZIGOU, O

GOLDSTEIN, L

机构：

[1] Alcatel Alsthom Recherche, 91460 Marcoussis, Route de Nozay

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Buried heterostructure lasers fabricated using a three-step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift-off. Preliminary results show cw operation with threshold currents of 60 mA for 800-mu-m-long devices and maximum output power up to 27 mW per facet.

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页码：1407 / 1408

页数：2

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