BURIED-HETEROSTRUCTURE LASERS FABRICATED BY INSITU PROCESSING TECHNIQUES

被引：19

作者：

WANG, YL

TEMKIN, H

HARRIOTT, LR

LOGAN, RA

TANBUNEK, T

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low-threshold currents of ∼62 mA.

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页码：1864 / 1866

页数：3

相关论文

共 16 条

[1] A FOCUSED ION-BEAM VACUUM LITHOGRAPHY PROCESS COMPATIBLE WITH GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

HARRIOTT, LR ;

TEMKIN, H ;

HAMM, RA ;

WEINER, J ;

PANISH, MB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1467-1470

[2] INP/INGAASP BURIED MESA RIDGE LASER - A NEW RIDGE LASER WITH REDUCED LEAKAGE CURRENTS [J].

JUNG, H ;

SCHLOSSER, E .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2171-2173

[3] HIGH-YIELD MANUFACTURE OF VERY LOW THRESHOLD, HIGH-RELIABILITY, 1.30-MU-M BURIED HETEROSTRUCTURE LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

KRAKOWSKI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

RAZEGHI, M ;

RICCIARDI, J ;

HIRTZ, P ;

DECREMOUX, B .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1470-1474

[4]

LONG JA, 1986, 3RD P INT C MET VAP, P42

[5] 1.5 MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER DIODE FABRICATED BY REACTIVE ION ETCHING USING A MIXTURE OF ETHANE AND HYDROGEN [J].

MATSUI, T ;

OHTSUKA, K ;

SUGIMOTO, H ;

ABE, Y ;

OHISHI, T .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1641-1642

[6]

PANISH MB, 1989, ANNU REV MATER SCI, V19, P209

[7] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :131-133

[8]

TANBUNEK T, 1989, APPL PHYS LETT, V55, P2183

[9] ELECTRON-BEAM-INDUCED CL2 ETCHING OF GAAS [J].

TANEYA, M ;

SUGIMOTO, Y ;

HIDAKA, H ;

AKITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03) :L515-L517

[10]

TANEYA M, 1989, IN PRESS FAL P MAT R