ELECTRON-BEAM-INDUCED CL2 ETCHING OF GAAS

被引：28

作者：

TANEYA, M

SUGIMOTO, Y

HIDAKA, H

AKITA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L515 / L517

页数：3

共 5 条

[1] DIRECT WRITING ONTO SI BY ELECTRON-BEAM STIMULATED ETCHING [J].

MATSUI, S ;

MORI, K .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1498-1499

[2] MASKLESS ION-BEAM WRITING OF PRECISE DOPING PATTERNS WITH BE AND SI FOR MOLECULAR-BEAM EPITAXIALLY GROWN MULTILAYER GAAS [J].

MIYAUCHI, E ;

MORITA, T ;

TAKAMORI, A ;

ARIMOTO, H ;

BAMBA, Y ;

HASHIMOTO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :189-193

[3] ELECTRON-INDUCED ETCHING OF SILICON BY SF6 [J].

OOSTRA, DJ ;

HARING, A ;

DEVRIES, AE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (4-5) :364-368

[4] CLEANING OF MBE GAAS SUBSTRATES BY HYDROGEN RADICAL BEAM IRRADIATION [J].

TAKAMORI, A ;

SUGATA, S ;

ASAKAWA, K ;

MIYAUCHI, E ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02) :L142-L144

[5] ULTRATHIN SEMICONDUCTOR LAYER MASKS FOR HIGH-VACUUM FOCUSED GA ION-BEAM LITHOGRAPHY [J].

TEMKIN, H ;

HARRIOTT, LR ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1478-1480

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