HIGH-QUALITY INP AND IN1-XGAXASYP1-Y GROWN BY GAS SOURCE MBE

被引：24

作者：

LAMBERT, M ^{[1
]}

GOLDSTEIN, L ^{[1
]}

PERALES, A ^{[1
]}

GABORIT, F ^{[1
]}

STARCK, C ^{[1
]}

LIEVIN, JL ^{[1
]}

机构：

[1] LABS MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91027-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of high quality InP and In1-xGa(x)As(y)P1-y by gas source molecular beam epitaxy is reported. 77 K mobilities up to 112,000 cm2/V.s for high purity InP have been measured. Fe-doped semi-insulating InP has been grown using an iron effusion cell, and resistivities as high as 10(9)-OMEGA-cm have been obtained. Selective epitaxy of InP on Si3N4-patterned substrates is also presented.

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页码：495 / 501

页数：7

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